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Opto- semiconductors	Photosensitive Electron Tube	LED/LD/ Light Sources	Cameras/Image Measurement	Life Science/ Medical	Semiconductor/FPD Analysis	Optical Measurement	X-ray	Others

Products > Opto-semiconductors > APD > Si APD (to 1 um) > NIR High Sensitivity Type

Si APD (to 1 um)

NIR Type (Low Bias Operation)

NIR Type (Low Tem. Coeffiecient)

Short Wavelength Type

NIR High Sensitivity Type

Surface-mount Type

Multi-element Type

Application/Field

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NIR High Sensitivity Type

1 - 9 of 9 results

Spectral Response Range

Peak Wavelength

Breakdown Voltage

Temperature Coefficient of VBR

Package Feature

S8890-02

dia.0.2 mm

400 to1100 nm

940 nm

500 V

2.5 V/deg. C

TO-5

S8890-05

dia.0.5 mm

400 to1100 nm

940 nm

500 V

2.5 V/deg. C

TO-5

S8890-10

dia.1 mm

400 to1100 nm

940 nm

500 V

2.5 V/deg. C

TO-5

S8890-15

dia.1.5 mm

400 to1100 nm

940 nm

500 V

2.5 V/deg. C

TO-5

S8890-30

dia.3 mm

400 to1100 nm

940 nm

500 V

2.5 V/deg. C

TO-8

S9251-02

dia.0.2 mm

440 to1100 nm

860 nm

250 V

1.85 V/deg. C

TO-18

S9251-05

dia.0.5 mm

440 to1100 nm

860 nm

250 V

1.85 V/deg. C

TO-18

S9251-10

dia.1 mm

440 to1100 nm

860 nm

250 V

1.85 V/deg. C

TO-5

S9251-15

dia.1.5 mm

440 to1100 nm

860 nm

250 V

1.85 V/deg. C

TO-5

1 - 9 of 9 results

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