Home

Site Map

Inquiry

MyAccount


Opto- semiconductors	Photosensitive Electron Tube	LED/LD/ Light Sources	Cameras/Image Measurement	Life Science/ Medical	Semiconductor/FPD Analysis	Optical Measurement	X-ray	Others

Products > Opto-semiconductors > APD > Si APD (to 1 um) > NIR Type (Low Bias Operation)

Si APD (to 1 um)

NIR Type (Low Bias Operation)

NIR Type (Low Tem. Coeffiecient)

Short Wavelength Type

NIR High Sensitivity Type

NIR Type (Low Bias Operation)

1 - 9 of 9 results

Type No.

Active Area

Spectral Response Range

Peak Wavelength

Breakdown Voltage

Temperature Coefficient of VBR

Package Feature

S2381

dia.0.2 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

S2382

dia.0.5 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

S2383

dia.1 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

S2383-10

dia.1 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

S2384

dia.3 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-5

S2385

dia.5 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-8

S3884

dia.1.5 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-5

S5139

dia.0.5 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

S8611

dia.0.5 mm

400 to1000 nm

800 nm

150 V

0.65 V/deg. C

TO-18

1 - 9 of 9 results

Return to Top of Page