Go to Language SelectorGo to Global NavigationGo to Site SearchGo to Sub NavigationGo to ContentGo to Site Information

Hamamatsu Photonics
Home  |  Site Map  |  Inquiry  |  MyAccount
Language Selector Japanese English
Global Site

Global Navigation
Products Support Exhibition Research And Development Corporate Profile Investors
Search Search for: Search Help

Opto-
semiconductors
Photosensitive
Electron Tube
LED/LD/
Light Sources
Cameras/Image Measurement
Life Science/
Medical
Semiconductor/FPD Analysis
Optical Measurement
X-ray
Others
Products > Opto-semiconductors > Si Photodiode > Si PIN Photodiode > For YAG Laser Detection > Si PIN photodiode


ここから本文です

Si PIN photodiode


S3759


Si PIN photodiode

Si PIN photodiode for YAG laser detection


contact by E-mailPriceQuoteOther

ページ内を移動するナビゲーションです


Package
Metal
Package Feature
TO-8
Active Area
dia.5 mm
Spectral Response Range
360 to1120 nm
Peak Wavelength
980 nm
Photo Sensitivity at peak
0.7 A/W
Dark Current Max.
10 nA
Rise Time
0.012 us
Terminal Capacitance
10 pF
Shunt Resistance
Note
Measurement Condition
Typ. Ta=25 deg. C, unless otherwise noted


Dimensional/Characteristic Chart


Spectral Response


Dimensional Outline (Unit: mm)






Hamamatsu Photonics K.K
Site Information Terms of Use Privacy Policy Help
Copyright © Hamamatsu Photonics K.K. All Rights Reserved.