IR-OBIRCH Analysis System uAMOS-200

The IR-OBIRCH Analysis System is a semiconductor failure analyzer which uses a revolutionary new method for localization of leakage current path and observe the abnormal resistance part of contacts (via contact) in LSI devices. The S/N ratio can be greatly improved by modulating the with the lock-in unit and detecting the OBIRCH signal in the frequency range as the modulation frequency (comparison to standard amplifier: 5 times or more). Furthermore, by using the high current probe head, devices a high current and high voltage can be analyzed.

Catalog(PDF 967KB)

Product Information

FEATURES
･  High  spatial  resolution  image
･  Backside  observation  (lambda=1.3  um)
･  Observation  of  high  doped  substrate  (Epi-sub.)
･  Using  an  infrared  laser  (wavelength:  1.3  um)  means  that　no  OBIC  signal  is  produced  in  the  semiconductor  field,  which  enables  the  OBIRCH  signal  caused  by  the  defect  to  be  detected.
･  Under  macro  lens,  failure  locations  in  a  DUT  (Device  Under  Test)  with  a  chip  size  of  up  to  15  mm  x  15  mm.

APPLICATIONS
･  Localization  of  leakage  current  path
　-  IDDQ  failure  analysis
･  Detection  of  metal  defect
　-  Inspection  of  defect  in  the  metal  line  (void,  Si  nodule)
　-  Inspection  of  abnormal  resistance  part  at  contact  hole  (via  contact)
　-  Metallization  process  monitoring