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FEATURES ・ Equipped with IR-confocal laser microscope ・ High sensitivity thermal detector (InSb) used ・ Optimally designed IR optics ・ PHEMOS-like operation ・ Analysis of thermal emissions image through the backside ・ Photoemission analysis possible with InGaAs camera ・ Superimposition of thermal and OBIRCH images
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APPLICATIONS ・ Short-circuit of metalization ・ Abnormality of contact holes ・ Microplasma leakage in oxide layer ・ Oxide layer breakdown ・ TFT leakage location identification ・ Organic EL leakage location detection ・ Observation of location of temperature abnormalities in devices during the development of new semiconductor devices
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