Si photodiode
S8265
|
Package
|
Ceramic
|
|
Package Feature
|
with filter
|
|
Peak Wavelength
|
540 nm
|
|
Active Area
|
2.8 x 2.4 mm
|
|
Spectral Response Range
|
340 to720 nm
|
|
Photo Sensitivity at peak
|
0.3 A/W
|
|
Dark Current Max.
|
0.02 nA
|
|
Rise Time
|
0.5 us
|
|
Terminal Capacitance
|
230 pF
|
|
Shunt Resistance
|
|
|
Operating Temperature
|
-25 to+85 deg. C
|
|
Storage Temperature
|
-40 to+85 deg. C
|
|
Note
|
|
|
Measurement Condition
|
Typ. Ta=25 deg. C, unless otherwise noted
|
|
Spectral Response
Dimensional Outline (Unit: mm)
|
|
