|

|

|


Opto- semiconductors	Photosensitive Electron Tube	LED/LD/ Light Sources	Cameras/Image Measurement	Life Science/ Medical	Semiconductor/FPD Analysis	Optical Measurement	X-ray	Others

Products > Division > Solid State Division > Visible Light/Illuminance Sensor > Si Photodidoe > Si photodiode

Visible Light/Illuminance Sensor

Light-to-frequency converter photo IC

GaAsP Photodidoe

Application/Field

Products by Category

Exhibition

Si photodiode

S1133

Si photodiode

Photodiode for visible range

	Datasheet(153kB)


	Specifications Dimensional/Characteristic Chart


	Specifications

Package	Ceramic
Package Feature	with filter
Peak Wavelength	560 nm
Active Area	2.8 x 2.4 mm
Spectral Response Range	320 to730 nm
Photo Sensitivity at peak	0.3 A/W
Dark Current Max.	0.01 nA
Rise Time	2.5 us
Terminal Capacitance	700 pF
Shunt Resistance	100 Gohm
Operating Temperature	-10 to+60 deg. C
Storage Temperature	-20 to+70 deg. C
Note
Measurement Condition	Typ. Ta=25 deg. C, unless otherwise noted


	Dimensional/Characteristic Chart

Spectral Response

Dimensional Outline (Unit: mm)

Return to Top of Page