Si APD (to 1 um)

These near infrared APDs are designed to be operated at low voltages. High gain can be obtained with voltages below 200 V.

S6045 series is near infrared APDs designed to decrease the temperature coefficient of the breakdown voltage. Stable gain can be obtained over a wide temperature range.

These short-wavelength APDs are optimized for detection of UV to visible light. High gain can be obtained in short wavelength regions.

S9251 series has high sensitivity in the near infrared range, especially in the 900 nm band. S8890 series is designed for the 1.06 um band, which makes it ideal for detecting YAG lasers.

S9717 series are Si APD encapsulated in a surface-mount ceramic package that ensures high reliability in the same wide operating temperature range (-20 to +85 degC) as metal package devices.

This quadrant APD is designed to operate with a low bias. The quadrant format on one chip ensures uniform characteristics between elements. Single power supply operation allows easy connections.