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Si PIN photodiode
Si Photodiode
For Precision Photometry
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Si PIN Photodiode
Multi-Element Type Si Photodiode
With Preamp, TE-cooled Type
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Si PIN photodiode
S5870
Two-segment photodiode for surface mounting
Datasheet(323kB)
Specifications
Dimensional/Characteristic Chart
Specifications
Package
Ceramic
Package Feature
Surface mount type
Active Area
10 x 10 mm
Number of Elements
2
Pixel Pitch
Spectral Response Range
320 to1100 nm
Peak Wavelength
960 nm
Photo Sensitivity at peak
0.72 A/W
Dark Current Max.
10 nA
Cut-off Frequency
10 MHz
Rise Time
Terminal Capacitance
50 pF
Type
Operating Temperature
-40 to+100 deg. C
Storage Temperature
-40 to+125 deg. C
Note
Measurement Condition
Typ. Ta=25 deg. C, unless otherwise noted
Dimensional/Characteristic Chart
Spectral Response
Dimensional Outline (Unit: mm)
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